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3DK106

INCHANGE
Part Number 3DK106
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 6, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Ga...
Datasheet PDF File 3DK106 PDF File

3DK106
3DK106

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.
) ·DC Current Gain- : hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-200 V VCEO Collector-Emitter Voltage 50-200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 7.
5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.
0 ℃/W 3DK106 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARA...


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