DatasheetsPDF.com

2SD2498

Part Number	2SD2498
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Sa...
Datasheet	2SD2498 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A ICP Collector Current- Pulse 12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A...

Similar Datasheet

2SD2400 SILICON POWER TRANSISTOR - SavantIC
2SD2400 NPN Transistor - INCHANGE
2SD2400A Power Transistor - Rohm
2SD2401 Silicon NPN Transistor - Sanken electric
2SD2401 SILICON POWER TRANSISTOR - SavantIC
2SD2401 NPN Transistor - INCHANGE
2SD2402 NPN SILICON EPITAXIAL TRANSISTOR - NEC
2SD2403 NPN Transistor - Renesas
2SD2406 Silicon NPN Transistor - Toshiba Semiconductor
2SD2406 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)