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2SD2014

Part Number	2SD2014
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Datasheet	2SD2014 PDF File

Features

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complem...

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