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2SD1804

Part Number	2SD1804
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804 DESCRIPTION ·Excellent linearity of hFE ·Low Collector...
Datasheet	2SD1804 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804 DESCRIPTION ·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V ·Fast switching time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1 W...

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