DatasheetsPDF.com

2SD1163A

Part Number	2SD1163A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage- : V(BR)CE...
Datasheet	2SD1163A PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 40 W 150 ℃ Tstg Storage Tempe...

Similar Datasheet

2SD1160 NPN TRANSISTOR - Toshiba Semiconductor
2SD1162 Silicon NPN Darlington Power Transistor - Inchange Semiconductor
2SD1163 NPN TRANSISTOR - Hitachi Semiconductor
2SD1163 NPN Transistor - INCHANGE
2SD1163 SILICON POWER TRANSISTOR - SavantIC
2SD1163 Silicon NPN Transistor - Renesas
2SD1163 NPN Silicon Epitaxial Power Transistor - Thinki Semiconductor
2SD1163A NPN TRANSISTOR - Hitachi Semiconductor
2SD1163A NPN Transistor - INCHANGE
2SD1163A SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)