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2SD880

Part Number	2SD880
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SD880 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Co...
Datasheet	2SD880 PDF File

Overview

isc Silicon NPN Power Transistor 2SD880 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max) @IC= 3.
0A ·Complement to Type 2SB834 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3.
0 A ICM Collector Current-Peak 6.
0 A IB Base Current-Continuous PC Collector Power Dissipation @ T...

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