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2SD669A

Part Number	2SD669A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage...
Datasheet	2SD669A PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.
5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature...

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