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2SD414

Part Number	2SD414
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126packaging ·Excellent linearity of hFE ·Low collector-to-emitte...
Datasheet	2SD414 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SB548 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.
8 A ICP Collector Current-Pulse 1.
5 A PC Collector Power Dissipation 1.
0 W TJ Junct...

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