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2SC3631-Z

INCHANGE
Part Number 2SC3631-Z
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent ...
Datasheet PDF File 2SC3631-Z PDF File

2SC3631-Z
2SC3631-Z

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 2 W 150 ℃ Tstg Storage...


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