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2SC3306

Part Number	2SC3306
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet	2SC3306 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse IB Base Current-Continuous PC Collector Power Dissipation @ TC=...

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