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2SC2705

Part Number	2SC2705
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=150V(Min) ·Good Linearity of ...
Datasheet	2SC2705 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 800 mW 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2705 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VBE(sat) Base-Emitter V...

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