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2SC1413A

Part Number	2SC1413A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION ·High Collector-base breakdown voltage:1...
Datasheet	2SC1413A PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION ·High Collector-base breakdown voltage:1500V ·Low saturation voltage@5A ·Large area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the horizontal output stage in power-transformer-less television receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 50 W ...

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