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2SA1012

Part Number	2SA1012
Manufacturer	INCHANGE
Description	TO-252 PNP Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A...
Datasheet	2SA1012 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.
4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www...

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