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2N6132

Part Number	2N6132
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6132 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= -2.5A...
Datasheet	2N6132 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6132 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= -2.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Complement to Type 2N6129 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -2 A 50 W ...

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