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2N6109

Part Number	2N6109
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2.5A...
Datasheet	2N6109 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6109 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -2.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature ...

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