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2N6212

Part Number	2N6212
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6212 DESCRIPTION ·With TO-3 packaging ·Very high DC current ...
Datasheet	2N6212 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6212 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -350 -300 -6 -2 ICM Collector Current-Peak -5 IB Collector Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 35 TJ Junction Tempe...

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