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MMD80R900P

INCHANGE
Part Number MMD80R900P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 4, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMD80R900P ·FEATURES ·With To-252(DPAK) package ·Low input capa...
Datasheet PDF File MMD80R900P PDF File

MMD80R900P
MMD80R900P


Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMD80R900P ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 6 3.
8 18 PD Total Dissipation @TC=25℃ 75.
8 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·...



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