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IXTY44N10T

INCHANGE
Part Number IXTY44N10T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 4, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTY44N10T ·FEATURES ·With To-252(DPAK) package ·Low input capa...
Datasheet PDF File IXTY44N10T PDF File

IXTY44N10T
IXTY44N10T

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTY44N10T ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 44 25 140 PD Total Dissipation @TC=25℃ 130 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
15 55 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTY44N10T ELECTRICAL CHARACTERISTICS TC=2...


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