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STP15NM65N

INCHANGE
Part Number STP15NM65N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP15NM65N ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacita...
Datasheet PDF File STP15NM65N PDF File

STP15NM65N
STP15NM65N


Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP15NM65N ·FEATURES ·Typical RDS(on)=0.
25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 15.
5 10 62 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER ...



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