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STP11NM60

Part Number	STP11NM60
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 3, 2020
Detailed Description	Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 ·FEATURES ·Typical RDS(on)=0.4Ω ·Low input capacitanc...
Datasheet	STP11NM60 PDF File

Overview

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 ·FEATURES ·Typical RDS(on)=0.
4Ω ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 44 PD Total Dissipation 160 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch...

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