N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB23N15D，IIRFB23N15D
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤90mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Frequency DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
23
IDM
Drain Current-Single Pulsed
90
PD
Total Dissipation @TC=25℃
160
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.
94 62
UNIT ℃/W ℃/W
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iscsemi.
cn
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB23N15D，IIRFB23N15D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=18A
IGSS
Gate-Source Leakage Current
VGS= ±30V
IDSS
Drain-Source Leakage Current
VDS=150V; VGS= 0V
VSD
Diode forward voltage
IF=14A; VGS = 0V
MIN TYP MAX UNIT
150
V
2
4
V
90
mΩ
±100 nA
25
μA
1.
3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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