N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
IPA60R160C6
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
23.
8 15
70
PD
Total Dissipation
34
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.
67 80
UNIT ℃/W ℃/W
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iscsemi.
cn
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA60R160C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.
25mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.
75mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=11.
3A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V
VSDF
Diode forward voltage
ISD=11.
3A, VGS = 0 V
600
V
2.
5
3.
5
V
140 160
mΩ
±0.
1 μA
1
μA
0.
9
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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