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EPC2010C

EPC
Part Number EPC2010C
Manufacturer EPC
Description Power Transistor
Published Aug 30, 2020
Detailed Description eGaN® FET DATASHEET EPC2010C EPC2010C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G ...
Datasheet PDF File EPC2010C PDF File

EPC2010C
EPC2010C

Overview
eGaN® FET DATASHEET EPC2010C EPC2010C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 5.
3) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 22 A 90 6 V -4 -40 to 150 °C -40 to 150 EPC2010C eGaN® FETs are supplied only in passivated die form with solder bars Applications • High Speed DC-DC conversion • Class D Audio • Lidar Benefits ...


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