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EPC2012

EPC
Part Number EPC2012
Manufacturer EPC
Description Power Transistor
Published Aug 30, 2020
Detailed Description eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT E...
Datasheet PDF File EPC2012 PDF File

EPC2012
EPC2012

Overview
eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years.
GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings VDS Drain-to-Source Voltage 200 V ID Continuous (TA =25˚C, θJA = 70) Pulsed (25˚C, Tpulse = 300 µs) 3 A 15 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 60 µA 200 IDSS Drain Source Leakage VDS = 160 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.
7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 3 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.
5 A, VGS = 0 V, T = 25˚C IS = 0.
5 A, VGS = 0 V, T = 125˚C All measurements were done with substrate shorted to source.
PARAMETER TheTErmSTaClOCNhDaITrIaOcNtSeristics MIN Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CRISθSJC TherInmpaultRCeasipsatacnitcaen,cJeunction to Case CROSθSJB TheOrmutapluRteCsaisptancictea,nJcuenction to Board VDS = 100 V, VGS = 0 V CRRSθSJA ReTvheerrsme aTlraRnessfiestraCnacpea, cJuitnanctcieon to Ambient (Note 1) Note 1: Q RθJA isGdetermined with thTeodteavlicGe m...


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