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EPC2007

EPC
Part Number EPC2007
Manufacturer EPC
Description Power Transistor
Published Aug 30, 2020
Detailed Description eGaN® FET DATASHEET EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A NEW PRODUCT EP...
Datasheet PDF File EPC2007 PDF File

EPC2007
EPC2007

Overview
eGaN® FET DATASHEET EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A NEW PRODUCT EPC2007 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years.
GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings Drain-to-Source Voltage (Continuous) 100 V VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C) 120 V ID Continuous (TA = 25˚C, θJA = 40) Pulsed (25˚C, Tpulse = 300 µs) 6 A 25 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 75 µA 100 IDSS Drain Source Leakage VDS = 80 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1.
2 mA 0.
7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 6 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.
5 A, VGS = 0 V, T = 25˚C IS = 0.
5 A, VGS = 0 V, T = 125˚C All measurements were done with substrate shorted to source.
Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJB Thermal Resistance, Junction to Board RθJA Thermal Resistance, Junction to Ambient (Note 1) Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.
co...


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