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NE76000

Part Number	NE76000
Manufacturer	Renesas
Description	N-CHANNEL GaAs MESFET
Published	Aug 25, 2020
Detailed Description	DATA SHEET GaAs MES FET NE76000 42 55 25 62 200 330 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES...
Datasheet	NE76000 PDF File

Overview

DATA SHEET GaAs MES FET NE76000 42 55 25 62 200 330 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.
6 dB TYP.
at f = 12 GHz • High associated gain Ga = 9.
0 dB TYP.
at f = 12 GHz • Gate length: Lg = 0.
3 Pm • Gate width: Wg = 280 Pm ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) 119 33 t CHIP DIMENSIONS (Unit: Pm) uc 450 57 Prod DRAIN DRAIN Drain to Source Voltage VDS 5.
0 Gate to Source Voltage VGS ð3.
0 Gate to Drain Voltage VGD ð5.
0 d Drain Current ID IDSS e Total Power Dissipation Ptot 500*1 Channel Temperature Tch 175 u Storage Temperature Tstg ð65 to +175 Thermal Resistance Rth(c-a) 190 in *1 : TA = 100 qC Ptot for chip m...

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