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2SC4094

Part Number	2SC4094
Manufacturer	CEL
Description	SILICON TRANSISTOR
Published	Aug 25, 2020
Detailed Description	DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68139 / 2SC4094 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON E...
Datasheet	2SC4094 PDF File

Overview

DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68139 / 2SC4094 JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 2.
9±0.
2 UT (1.
8) 0.
85 0.
95 1.
1−+00.
.
12 PHASE0.
8 0 to 0.
1 DESCRIPTION The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
0.
4 2 PACKAGE DIMENSIONS (Units: mm) +0.
1 −0.
05 +0.
1 −0.
05 2.
8 +0.
2 −0.
3 1.
5 +0.
2 −0.
1 3 0.
4 (1.
9) +0.
1O −0.
05 FEATURES • NF = 1.
2 dB TYP.
@f = 1.
0 GHz, VCE = 8 V, IC = 7 mA • S21e2 = 15 dB TYP.
@f = 1.
0 GHz, VCE = 8 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.
5 V Collector Current IC 65 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN.
TYP.
Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE 50 Gain Bandwidth Product fT 9 Feed-Back Capacitance Insertion Power Gain Cre 0.
25 S21e2 13 15 Maximum Available Gain MAG 17 Noise Figure NF 1.
2 MAX.
1.
0 1.
0 250 0.
8 2.
0 hFE Classification Class R36/RCF * R37/RCG * Marking R36 R37 hFE 50 to 100 80 to 160 * Old Specification / New Specification Document No.
P10366EJ1V1DS00 (1st edition) Date Published March 1997 N R38/RCH * R38 125 to 250 0.
6 5° 5° +0.
1 −0.
06 0.
16 5° 5° PIN CONNECTIONS 1.
Collector 2.
Emitter 3.
Base 4.
Emitter UNIT A A GHz pF dB dB dB TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1.
0 GHz VCB = 10...

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