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2SC5998

Renesas
Part Number 2SC5998
Manufacturer Renesas
Description NPN Transistor
Published Aug 7, 2020
Detailed Description 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • ...
Datasheet PDF File 2SC5998 PDF File

2SC5998
2SC5998

Overview
2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.
1.
01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ.
• High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ.
at VCE = 3.
6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ.
at Pin = +16 dBm, f = 500 MHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for up to 2 GHz applications.
e.
g.
FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “YC-”.
3 1 2 1.
Collector 2.
Base 3.
Emitter Absolute Maximum Ratings Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Note: Value on PCB ( FR-4 : 25 x 30 x 1.
0mm Double side ) Ratings 13 5 1.
5 500...


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