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2SA1204

Part Number	2SA1204
Manufacturer	Toshiba
Description	PNP Transistor
Published	Aug 7, 2020
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 2SA1204 Audio Frequency Amplifier Applications Un...
Datasheet	2SA1204 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SC2884 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −35 V VCEO −30 V VEBO −5 V IC −800 mA IB −160 mA PC 500 PC mW 1000 (Note 1) Tj 150 °C Tstg −55 to 150 °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.
8 mm t) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
)...

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