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AFT09MS031NR1

NXP
Part Number AFT09MS031NR1
Manufacturer NXP
Description RF Power LDMOS Transistor
Published Jul 17, 2020
Detailed Description Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral ...
Datasheet PDF File AFT09MS031NR1 PDF File

AFT09MS031NR1
AFT09MS031NR1

Overview
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz.
The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
Narrowband Performance (13.
6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 764 18.
0 74.
1 32 870 17.
2 71.
0 31 941 15.
7 68.
1 31 800 MHz Broadband Performance (13.
6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 760 15.
7 62.
0 44 820...


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