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BFU768F

NXP
Part Number BFU768F
Manufacturer NXP
Description NPN wideband silicon germanium RF transistor
Published Jul 14, 2020
Detailed Description BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profi...
Datasheet PDF File BFU768F PDF File

BFU768F
BFU768F


Overview
BFU768F NPN wideband silicon germanium RF transistor Rev.
1.
2 — 24 December 2012 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits  Low noise high linearity RF transistor  110 GHz fT silicon germanium technology  Optimal linearity for low current and high gain  Low minimum noise figure of 0.
50 dB at 2.
4 GHz and 0.
74 dB at 5.
8 GHz  Low component count Wi-Fi LNA application circuits available for 2.
4 GHz ISM band and 4.
9 GHz to 5.
9 GHz U-NII band, with optimized RF performance:  Low current: 10.
8 mA  Noise figure < 1.
2 dB  Gain: 13.
1 dB at 2.
4 GHz, 12.
2 dB at 5 GHz  High IP3: 15.
7 dBm at 2.
4 GHz, 18.
8 dBm at 5 GHz  Very fast on/off times  Unconditionally stable  Higher IP3, higher gain or lower noise figure possible with different application circuits 1.
3 Applications  High linearity applications  Medium output power applications  Wi-Fi / WLAN / WiMAX  ZigBee NXP Semiconductors BFU768F NPN wideband silicon germanium RF transistor 1.
4 Quick reference data Table 1.
Quick reference data Wi-Fi LNA applications circuits; IC = 10.
8 mA; VCE = 2.
1 V; Tamb = 25 C; unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCBO VCEO VEBO IC hFE s212 collector-base voltage collector-emitter voltage emitter-base voltage collector current DC current gain insertion power gain open emitter open base open collector IC = 10 mA; VCE = 2 V; Tj = 25 C f = 2.
4 GHz f = 5.
0 GHz -- 10 V -- 2.
8 V -- 1.
0 V -- 70 mA 155 330 505 - 13.
1 - dB - 12.
2 - dB f = 5.
9 GHz - 11.
1 - dB NF noise figure f = 2.
4 GHz - 1.
1 - dB f = 5.
0 GH...


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