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A2G35S200-01SR3

Part Number	A2G35S200-01SR3
Manufacturer	NXP
Description	RF Power GaN Transistor
Published	Jul 14, 2020
Detailed Description	Freescale Semiconductor Technical Data Document Number: A2G35S200--01S Rev. 0, 5/2016 RF Power GaN Transistor This 40...
Datasheet	A2G35S200-01SR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: A2G35S200--01S Rev.
0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band.
There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
3500 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc, IDQ = 291 mA, Pout = 40 W Avg.
, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) IRL (dB) 3400 MHz 14.
7 32.
4 7.
2 –34.
9 –10 3500 MHz 16.
1 35.
3 7.
0 –34.
7 –19 3600 MHz 16.
1 36.
7 6.
6 –32.
8 –9 Features  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications A2G35S200--01SR3 3400–3600 MHz, 40 W AVG.
, 48 V AIRFAST RF POWER GaN TRANSISTOR NI--400S--2S RFin/VGS 2 1 RFout/VDS (Top View) Figure 1.
Pin Connections  Freescale Semiconductor, Inc.
, 2016.
All rights reserved.
RF Device Data Freescale Semiconductor, Inc.
A2G35S200--01SR3 1 Table 1.
Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Operating Voltage Maximum Forward Gate Current @ TC = 25C Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range Absolute Maximum Junction Temperature (1) Table 2.
Thermal Characteristics VDSS 125 Vdc VGS –8, 0 Vdc VDD 0 to +55 Vdc IGMAX 25 mA Tstg – 65 to +150 C TC – 55 to +150 C TJ – 55 to +225 C TMAX 275 C Characteristic Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case Case Temperature 75C, PD = 81 W Thermal Resistance by Finite Element Analysis, Junction--to--Case Case Temperat...

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