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2N4912

Part Number	2N4912
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	Jul 6, 2020
Detailed Description	2N4912 Silicon NPN Transistor High Voltage, Medium Power Switch TO−66 Type Package Description: The 2N4912 silicon NPN ...
Datasheet	2N4912 PDF File

Overview

2N4912 Silicon NPN Transistor High Voltage, Medium Power Switch TO−66 Type Package Description: The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO .
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80V Collector−Base Voltage, VCBO .
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80V Emitter−Base Voltage, VEBO .
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5V Collector Current, IC Continuous .
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1A Peak .
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4A Base Current, IB .
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1A Total Power Dissipation (TC = +25C), PD .
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25W Derate above 25C .
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0.
143W/C Operating Junction Temperature Range, TJ .
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−65 to +200C Storage Junction Temperature Range, Tstg .
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−65 to +200C Thermal Resistance, Junction−to−Case, RthJC .
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7C/W Electrical Characteristics: (TC = +25C unle...

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