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2N5428

Silicon NPN Transistor - NTE

2N5428 PDF File

Description

2N5428 Silicon NPN Transistor Medium Power TO−66 Type Package Description: The 2N5430 is a silicon NPN transistor in a TO−66 type package designed for switching and wide− band amplifier applications Absolute Maximum Ratings: Collector−Base Voltage, VCBO .
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80V Collector−Emitter Voltage, VCEO .
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80V Emitter−Base Voltage, VEBO .
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6V Collector Current, IC .
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7A Base Current, IB .
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1A Total Device Dissipation (TC = +25C), PD .
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40W Derate above 25C .
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228 mW/C Operating Junction Temperature Range, TJ .
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−65 to +200C Storage Temperature Range, Tstg .
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−65 to +200C Thermal Resistance, Junction−to−Case, RthJC .
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4.
37C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Emitter Sustaining Voltage VCEO (sus) IC = 50mA, IB = 0, Note 1 80 Collector Cutoff Current ICEX VCE = 75V, VEB(off) = 1.
5V − VCE = 75V, VEB(off) = 1.
5V, TC = 150C − ICBO VCB = Rated VCB, IE = 0 − Emitter Cutoff Curren...

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