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2N6052

NTE
Part Number 2N6052
Manufacturer NTE
Description Silicon PNP Transistor
Published Jul 5, 2020
Detailed Description 2N6052 Silicon PNP Transistors Darlington Power Amplifier TO−3 Type Package Description: The 2N6052 is a silicon PNP Da...
Datasheet PDF File 2N6052 PDF File

2N6052
2N6052


Overview
2N6052 Silicon PNP Transistors Darlington Power Amplifier TO−3 Type Package Description: The 2N6052 is a silicon PNP Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications.
Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO .
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100V Collector−Base Voltage, VCB .
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