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2N5210

Silicon PNP Transistor - NTE

2N5210 PDF File

Description

2N5210 Silicon NPN Transistor Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO .
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50V Collector−Base Voltage, VCBO .
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50V Emitter−Base Voltage, VEBO .
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4V Continuous Collector Current, IC .
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50mA Total Device Dissipation (TA = +25C), PD .
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625mW Derate Above 25C .
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5.
0mW/C Total Device Dissipation (TC = +25C), PD .
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1.
5W Derate Above 25C .
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12mW/C Operating Junction Temperature Range, TJ .
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−55 to +150C Storage Temperature Range, Tstg .
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−55 to +150C Thermal Resistance, Junction−to−Case, RthJC .
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83.
3C/W Thermal Resistance, Junction−to−Ambient, RthJA .
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200C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain Collector−Emi...

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