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2N5366

Silicon PNP Transistor - NTE

2N5366 PDF File

Description

2N5366 Silicon PNP Transistor Audio Power Amplifier TO−92 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO .
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40V Collector−Base Voltage, VCBO .
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40V Emitter−Base Voltage, VEBO .
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4V Continuous Collector Current , IC .
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500mA Total Device Dissipation, PD .
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625mW Derate Above +25C .
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5mW/C Operating Junction Temperature Range, TJ .
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−55 to +150C Storage Temperature Range, Tstg .
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−55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA .
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200C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Collector−Base Breakdown Voltage V(BR)CBO IC = 10A Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage V(BR)CEO IC = 10mA V(BR)EBO IC = 10A Collector Cutoff Current ICBO VCB = 40V ICES VCB = 40V Emitter Cutoff Current IEBO VEB = 4V DC Current Gain hFE VCE = 10V, IC = 2mA VCE = 1V, IC = 50mA VCE = 5V, IC = 300mA Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 2.
5mA IC = 300mA, IB = 30mA Base−Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 2.
5mA IC = 300mA, IB = 30mA Base−E...

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