Silicon PNP Transistor - NTE
Description
2N5195 Silicon PNP Transistor Audio Power Amp, Switch TO−126 Type Package
Description: The 2N5195 is a silicon PNP transistor in a TO−126 plastic package designed for use in power amplifier and switching circuits.
Features: D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO .
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80V
Collector−Base Voltage, VCB .
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80V Emitter−Base Voltage, VEB .
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5V
Collector Current, IC .
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4A Base Current, IB .
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1A Total Power Dissipation (TC = +25C), PD .
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40W
Derate Above 25C .
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320mW/C Operating Junction Temperature Range, TJ .
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−65 to +150C Storage Temperature Range, Tstg .
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−65 to +150C Thermal Resistance, Junction−to−Case, RthJC .
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3.
12C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 0.
1A, IB = 0, Note 1
80 − − V
Collector Cutoff Current
ICEO VCE = 80V, IB = 0
− − 1.
0 mA
Emitter Cutoff Current
ICEX VCE ...
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