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AIMW120R045M1

Infineon
Part Number AIMW120R045M1
Manufacturer Infineon
Description Silicon Carbide MOSFET
Published Jul 2, 2020
Detailed Description AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconduct...
Datasheet PDF File AIMW120R045M1 PDF File

AIMW120R045M1
AIMW120R045M1

Overview
AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide  Very low switching losses  Threshold-free on state characteristic  IGBT-compatible driving voltage (15V for turn-on)  0V turn-off gate voltage  Benchmark gate threshold voltage, VGS(th)=4.
5V  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Temperature independent turn-off switching losses Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential Applications  On-board Charger/PFC  ...


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