GaAs InGaP HBT MMIC POWER AMPLIFIER - Analog Devices
Description
HMC407MS8G / 407MS8GE
v04.
1019
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz
Typical Applications
This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: • UNII • HiperLAN
9
Features
Gain: 15 dB Saturated Power: +29 dBm 28% PAE Supply Voltage: +5V Power Down Capability No External Matching Required
Functional Diagram
General Description
The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz.
The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output.
The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage.
Power down capability is available to conserve current consumption when the amplifier is not in use.
AMPLIFIERS - LINEAR & POWER - SMT
9-1
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed
Vpd = 0V/5V Vpd = 5V
tON, tOFF
Min.
10
21 32
Typ.
5-7 15 0.
025 12 15 25 29 37 5.
5 0.
002 / 230
7 30
Max.
18 0.
035
Min.
Typ.
Max.
Units
5.
6 - 6.
0
GHz
12
15
18
dB
0.
025
0.
035 dB/ °C
12
dB
15
dB
22
25
dBm
29
dBm
36
40
dBm
5.
5
dB
0.
002 / 230
mA
7
mA
30
ns
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