GaAs InGaP HBT MMIC POWER AMPLIFIER - Analog Devices
Description
Amplifiers - Linear & Power - SMT
HMC406MS8G / 406MS8GE
v06.
0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Typical Applications
The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio • UNII & ISM
Features
Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count
Functional Diagram
General Description
The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz.
The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.
With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage.
Vpd can be used for full power down or RF output power/ current control.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed
Min.
Typ.
Max.
5-6
13
16
21
0.
03
0.
04
10
8
21
24
27
34
38
6.
0
Vpd = 0V/5V
0.
002 / 300
Vpd = 5V
7
tON, tOFF
35
Min.
Typ.
Max.
Units
5.
7 - 5.
9
GHz
14
17
21
dB
0.
03
0.
04 dB/ °C
11
dB
9
dB
24
27
dBm
29
dBm
34
38
dBm
6.
0
dB
0.
002 / 300
mA
7
mA
35
ns
1
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