Serial MRAM Memory - Renesas
Description
High Performance
M1004204/M1008204/M1016204
Serial MRAM Memory M3004204/M3008204/M3016204
Description
Mxxxx204 is a magneto-resistive random-access memory (MRAM).
It is offered in density ranging from 4Mbit to 16Mbit.
MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM).
Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C.
MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory.
MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties.
It offers low latency, low power, infinite endurance and scalable non-volatile memory technology.
Mxxxx204 is available in small footprint 8-pad DFN (WSON) and 8pin SOIC packages.
These packages are compatible with similar low-power volatile and non-volatile products.
Mxxxx204 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges.
Typical Applications
• Ideal for applications that must store and retrieve data without incurring large latency penalties.
• Factory Automation • Multifunction Printers • Industrial Control And Monitoring • Medical Diagnostics • Data Switches And Routers
Block Diagram
Features
Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz
Technology • 40nm pMTJ STT-MRAM • Data Endurance: 1016 write cycles • Data Retention: 20 years @ 85°C
Density • 4Mb, 8Mb, 16Mb
Operating Voltage Range • VCC: 1.
71V – 2.
00V • VCC: 2.
70V – 3.
60V
Operating Temperature Range • Industrial: -40°C to 85°C • Industrial Plus: -40°C to 105°C
Packages • 8-pad DFN (WSON) (5.
0mm x 6.
0mm) • 8-pin SOIC (5.
2mm x 5.
2mm)
Data Protection • Hardware Based: Write Protect Pin (WP#) • Software Based: Address Range Selectable through Configuration bits (Top/Bottom, Block Protect[2:0])
Identification • 64-bit Unique ID • 64-...
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