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DF200R12W1H3F_B11

Infineon
Part Number DF200R12W1H3F_B11
Manufacturer Infineon
Description IGBT
Published Jun 11, 2020
Detailed Description DF200R12W1H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyP...
Datasheet PDF File DF200R12W1H3F_B11 PDF File

DF200R12W1H3F_B11
DF200R12W1H3F_B11

Overview
...ACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • HighSpeedIGBTH3 • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik J VCES = 1200V IC nom = 30A / ICRM = 60A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • HighspeedIGBTH3 • Lowswitchinglosses MechanicalFeatures • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperaturesensor • Compact...


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