Phototransistor Optocoupler - CT Micro
Description
CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Features
• High isolation 5000 VRMS • CTR flexibility available see order information • Extra low coupling capacitance • DC input with transistor output • OperatingTemperature range - 55 °C to 125 °C • Green Package
Applications
• Switch mode power supplies • Computer peripheral interface • Microprocessor system interface
Description
The CT11XX-W, CT11XXL-W series consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 5-lead SOP Package.
Package Outline
Schematic
CT Micro Proprietary & Confidential
Page 1
Rev 2 Dec, 2017
CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W
DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage *1
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature *2
Emitter
IF Forward current IF(TRANS) Peak transient current (≤1μs P.
W,300pps)
VR Reverse voltage PD Power dissipation
Detector
PD Power dissipation BVCEO Collector-Emitter Breakdown Voltage BVECO Emitter-Collector Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage
IC Collector Current
Thermal Characteristics
Symbol
Parameters
RӨJA Thermal Resistance Junction-Ambient
TJ Junction temperature
Note: 1.
Soldering Time: 10 seconds (max)
Ratings 5000
-55 ~ +125 -55 ~ +150
260
50 1 6 85
150 80 7 80 7 50
Units VRMS
oC oC oC
Notes
mA A V mW
mW V V V V mA
Ratings 445 125
Units ℃/W
℃
Notes
CT Micro Proprietary & Confidential
Page 2
Rev 2 Dec, 2017
CT1110-W, CT1111-W, CT1...
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