DatasheetsPDF.com

SM315A

WILLAS
Part Number SM315A
Manufacturer WILLAS
Description Schottky Barrier Rectifiers
Published May 19, 2020
Detailed Description ϯ>Žǁs&^ĐŚŽƚƚŬLJĂƌƌŝĞƌZĞĐƚŝĨŝĞƌƐ ϰϬsΕϮϬϬs ^Dϯϰ THRU ^DϯϮϬ PRIMARY CHARACTERISTICS VRRM 40V,60V,100V,150V,200V...
Datasheet PDF File SM315A PDF File

SM315A
SM315A


Overview
ϯ>Žǁs&^ĐŚŽƚƚŬLJĂƌƌŝĞƌZĞĐƚŝĨŝĞƌƐ ϰϬsΕϮϬϬs ^Dϯϰ THRU ^DϯϮϬ PRIMARY CHARACTERISTICS VRRM 40V,60V,100V,150V,200V IO 3.
0A VF 0.
45V,0.
55V,0.
75V,0.
82V,0.
85V TJ,Max 150℃,175℃ SMA(DO-214AC) ● Body Marking Example Marking :60$a60$ Ex :SM$ PACKAGE Logo Date Code Marking Code VYM S0$ FEATURES  Low Profile surface mount applications in order to optimize board space  Low power loss, high efficiency  High current capability, low forward voltage drop  High surge capability  Guard ring for overvoltage protection  Ultra high-speed switching  Silicon epitaxial planar chip,metal silicon junction  Moisture Sensitivity Level 1 V:Product Lines Y:A.
D.
late code, EX : 4-2014,5-2015 M:Month, EX : 1-1,2-2,---10-O,11-N,12-D + MECHANICAL DATA  Case：Molded plastic, SMA(DO-214AC) -  Polarity：Indicated by cathode band  Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026  Epoxy : UL94-V0 rated flame retardant Maximum Ratings and Electrical Characteristics Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter Marking Code Symbol SM34A SM34A SM36A SM36A SM310A SM310A SM315A SM315A SM320A SM320A Units Max.
Repetitive peak reverse voltage Max.
DC blocking voltage Max.
RMS voltage Max.
Instantaneous forward voltage @3.
0A, TA=25°C Operating Temperature VRRM VDC VRMS VF TJ 40 60 100 40 60 100 28 42 70 0.
45 0.
55 0.
75 -50 to +150 150 200 150 200 105 140 0.
82 0.
85 -50 to +175 V V V V °C Parameter Conditions Symbol Forward rectified current Forward surge current Reverse Current Thermal Resistance see Fig.
1 8.
3ms single half sine-wave superimposed on rate load (JEDEC method) VR =VRRM TA=25°C VR =VRRM TA=100°C Junction to ambient IO IFSM IR IR RθJA Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage CJ Storage temperature TSTG MIN.
-50 TYP.
55 250 MAX.
3.
0 Units A 125 A 0.
5 mA 20 mA °C/W pF +1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)