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AO6409A

Alpha & Omega Semiconductors
Part Number AO6409A
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published May 11, 2020
Detailed Description AO6409A 20V P-Channel MOSFET General Description Product Summary The AO6409A uses advanced trench technology to provi...
Datasheet PDF File AO6409A PDF File

AO6409A
AO6409A


Overview
AO6409A 20V P-Channel MOSFET General Description Product Summary The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch applications.
VDS ID (at VGS=-4.
5V) RDS(ON) (at VGS= -4.
5V) RDS(ON) (at VGS= -2.
5V) RDS(ON) (at VGS= -1.
8V) ESD protected -20V -5.
5A < 41mW < 53mW < 65mW TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.
5 -4.
2 -30 2.
1 1.
3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 48 75 37 Max 60 90 45 D S Units V V A W °C Units °C/W °C/W °C/W Rev 4.
0: January 2019 www.
aosmd.
com Page 1 of 5 AO6409A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-20V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±8V VDS=VGS, ID=-250mA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-5.
5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-2.
5V, ID=-4A VGS=-1.
8V, ID=-2A Forward Transconductance VDS=-5V, ID=-5.
5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -20 -0.
3 -30 -0.
57 34 49 42 52 20 -0.
64 -1 -5 ±10 -0.
9 41 59 53 65 -1 -2 V mA mA V A mW mW mW S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistanc...


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