| Part Number | VF20120SG-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Title | High Voltage Trench MOS Barrier Schottky Rectifier |
| Description | V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rect... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22... |
| Published | May 4, 2020 |
| Datasheet |
 VF20120SG-E3 PDF File
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