N-CHANNEL MOSFET - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD
2N90-FC
Power MOSFET
2A, 900V N-CHANNEL POWER MOSFET
11
DESCRIPTION
The UTC 2N90-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0
* RDS(ON) ≤ 8.
0 Ω @ VGS=10V, ID=1.
0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.
Drain
TO-220F
TO-220F1
11
TO-220F2
TO-251
1 TO-252
1.
Gate
3.
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N90L-TF1-T
2N90G-TF1-T
2N90L-TF3-T
2N90G-TF3-T
2N90L-TF2-T
2N90G-TF2-T
2N90L-TM3-T
2N90G-TM3-T
2N90L-TN3-R
2N90G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F TO-220F2 TO-251 TO-252
Pin Assignment 123 GD S GD S GD S GD S GD S
Packing
Tube Tube Tube Tube Tape Reel
2N90G-TF1-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube, R: Tape Reel (2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F
TM3: TO-251, TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC 2N90
1
L: Lead Free G: Halogen Free
Date Code
www.
unisonic.
com.
tw Copyright © 2020 Unisonic Technologies Co.
, Ltd
1 of 8
QW-R205-661.
a
2N90-FC
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM EAS dv/dt
900 V ±30 V
2A 4A 54 mJ 3.
1 V/ns
Power Dissipation
TO-220F/TO-220F1 TO-220F2
PD
24 W
TO-251/TO-252
42 W
Junction Temperature Storage Temperature
TJ TSTG
+150 -55 ~ +150
°С °С
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not im...
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