N-CHANNEL MOSFET - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD
14N50-ML
14A, 500V N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 14N50-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) ≤ 0.
58 Ω @ VGS=10V, ID=7.
0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
2.
Drain
1 1
Power MOSFET
TO-220F TO-220F1 TO-220F2
1.
Gate
3.
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N50L-TF1-T
14N50G-TF1-T
14N50L-TF2-T
14N50G-TF2-T
14N50L-TF3-T
14N50G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2 TO-220F
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tube
14N50G-TF1-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC 14N50
1
L: Lead Free G: Halogen Free
Date Code
www.
unisonic.
com.
tw Copyright © 2020 Unisonic Technologies Co.
, Ltd
1 of 7
QW-R205-624.
A
14N50-ML
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM EAS dv/dt
500 V ±30 V 14 A 28 A 714 mJ 3.
7 V/ns
Power Dissipation
PD 40 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: ...
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