N-CHANNEL MOSFET - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD 18N50-C
18A, 500V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 18N50-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 0.
3 Ω @ VGS=10V, ID=9.
0A * Fast Switching Capability * Avalanche Energy Specified
1 TO-3PB
1 TO-220F
11
TO-220F1
TO-220F2
SYMBOL 2.
Drain
1.
Gate
3.
Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen-Free
18N50L-TF1-T
18N50G-TF1-T
18N50L-TF2-T
18N50G-TF2-T
18N50L-TF3-T
18N50G-TF3-T
18N50L-T3B-T
18N50G-T3B-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2 TO-220F TO-3PB
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tube Tube
18N50G-TF1-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, TF3: TO-220F
T3B: TO-3PB (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC 18N50
1
L: Lead Free G: Halogen Free
Date Code
www.
unisonic.
com.
tw Copyright © 2020 Unisonic Technologies Co.
, Ltd
1 of 8
QW-R205-539.
B
18N50-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM EAS dv/dt
500 V ±30 V 18 A 36 A 780 mJ 3.
4 V/ns
Power Dissipation
TO-220/TO-220F1 TO-220F2
PD
42 W
TO-3PB
215 W
Junction Temperature Storage Temperature
TJ TSTG
+150 -55 ~ +150
°С °С
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature.
3.
L=10mH, IAS=12.
5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4.
ISD≤ 18A, di/...
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